PureBeta | SiC Single Crystal Wafer
The future realized by SiC Single Crystal Wafers
PureBeta™ SiC Single Crystal Wafer Specifications
6H n-type
| |
2 inch |
3 inch |
| Diameter |
50.8 ± 0.25mm |
76.2 ± 0.25mm |
| Polytype |
6H |
6H |
| Conductivity |
Conducting, n-Type |
Conducting, n-Type |
| Face Orientation |
{0001} ± 0.5° |
{0001} ± 0.5° |
| Thickness |
400 ± 25μm |
375 ± 25μm |
| Primary Flat Length |
15.8 ± 1.6mm |
22.0 ± 2.0mm |
| Secondary Flat Length |
8.0 ± 1.6mm |
11.0 ± 1. 5mm |
| Primary Flat Orientation |
<11-20> ± 1° |
<11-20> ± 2° |
| Secondary Flat Orientation |
90°CW from Primary Flat ± 5° |
90°CW from Primary Flat ± 5° |
| Edge Treatment |
Conforming to SEMI Std. |
Conforming to SEMI Std. |
| Front Surface (Si) Finish |
Epi-Ready (CMP) |
Epi-Ready (CMP) |
| Back Surface Finish |
Optical Polish |
Optical Polish |
| Laser Mark Location |
Carbon Face, Conforming to SEMI Std. |
Carbon Face, Conforming to SEMI Std. |
| Warp |
<25μm |
<40μm |
| Resistivity |
0.06 ～ 0.10Ω･cm |
0.06 ～ 0.10Ω･cm |
| Edge Exclusion |
2mm |
2mm |
| Micropipe Density |
<30cm-2 |
<30cm-2 |
| Packaging |
Single Wafer Container |
Single Wafer Container |
6H SI-type
| |
3 inch |
100 mm |
| Diameter |
76.2 ± 0.25 mm |
100.0 ± 0.50 mm |
| Polytype |
6H |
6H |
| Conductivity |
Semi-Insulating |
Semi-Insulating |
| Face Orientation |
{0001} ± 0.5° |
{0001} ± 0.5° |
| Thickness |
375 ± 25μm |
500 ± 25μm |
| Primary Flat Length |
22.0 ± 2.0 mm |
32.5 ± 2.0 mm |
| Secondary Flat Length |
11.0 ± 1.5 mm |
18.0 ± 2.0 mm |
| Primary Flat Orientation |
<11-20> ± 1° |
<11-20> ± 2° |
| Secondary Flat Orientation |
90°CW from Primary Flat ± 5° |
90°CW from Primary Flat ± 5° |
| Edge Treatment |
Conforming to SEMI Std. |
Conforming to SEMI Std. |
| Front Surface (Si) Finish |
Epi-Ready (CMP) |
Epi-Ready (CMP) |
| Back Surface Finish |
Optical Polish |
Optical Polish |
| Laser Mark Location |
Carbon Face, Conforming to SEMI Std. |
Carbon Face, Conforming to SEMI Std. |
| Warp |
<40μm |
<40μm |
| Resistivity |
>105Ω･cm |
>105Ω･cm |
| Edge Exclusion |
2mm |
2mm |
| Micropipe Density |
<30cm-2 |
<30cm-2 |
| Packaging |
Single Wafer Container |
Single Wafer Container |
4H n-type
| |
3 inch |
| Diameter |
76.2 ± 0.25 mm |
| Polytype |
4H |
| Conductivity |
Conducting, n-Type |
| Face Orientation |
4.0°toward <11-20> ± 0.5° |
| Thickness |
350 ± 25μm |
| Primary Flat Length |
22.0 ± 2.0 mm |
| Secondary Flat Length |
11.0 ± 1.5 mm |
| Primary Flat Orientation |
<11-20> ± 2° |
| Secondary Flat Orientation |
90°CW from Primary Flat ± 5° |
| Edge Treatment |
Conforming to SEMI Std. |
| Front Surface Finish |
Epi-Ready (CMP) |
| Back Surface Finish |
Optical Polish |
| Laser Mark Location |
Carbon Face, Conforming to SEMI Std. |
| Warp |
<40μm |
| Resistivity |
<0.03Ω･cm |
| Edge Exclusion |
2mm |
| Micropipe Density |
[<5cm2 / <30cm2 / <30cm2] |
| Poly-type Area |
[<5% / <5% / <20%] |
| Packaging |
Single Wafer Container |
* Note : The numbers in the brackets [ * / * / * ] are graded as S/A/B.
Physical properties
| Thermal conductivity (laser flash method, RT) |
309 W/m•K (Conductivity type) |
| Micropipe density (nondestructive optical method) |
10~100/cm2 |
| Bulk purity (GD-MS) |
Al |
< 0.0.5ppm |
| Fe |
< 0.0.5ppm |
| V |
< 0.0.5ppm |
Notes: The above are typical values and are not guaranteed values.
